Rajat Sharma
65Patents
14h-index
92Co-inventors
83Inventor score
Filing activity: Feb 9, 2005 → Jan 19, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8314429B1 | Multi color active regions for white light emitting diode | Electricity | 268 | Active |
| US8252662B1 | Method and structure for manufacture of light emitting diode devices using bulk GaN | Electricity | 215 | Active |
| US8284810B1 | Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods | Electricity | 185 | Active |
| US8634442B1 | Optical device structure using GaN substrates for laser applications | Electricity | 73 | Active |
| US8299473B1 | Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors | Electricity | 58 | Active |
| US8354679B1 | Microcavity light emitting diode method of manufacture | Electricity | 58 | Active |
| US9531164B2 | Optical device structure using GaN substrates for laser applications | Electricity | 46 | Active |
| US8455894B1 | Photonic-crystal light emitting diode and method of manufacture | Electricity | 40 | Active |
| US8494017B2 | Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods | Electricity | 37 | Active |
| US8293551B2 | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices | Electricity | 35 | Active |
| US8247886B1 | Polarization direction of optical devices using selected spatial configurations | Electricity | 32 | Active |
| US7846757B2 | Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices | Electricity | 24 | Active |
| US8618560B2 | Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors | Electricity | 21 | Active |
| US8313964B2 | Singulation method and resulting device of thick gallium and nitrogen containing substrates | Electricity | 18 | Active |
| US9071039B2 | Optical device structure using GaN substrates for laser applications | Electricity | 14 | Active |
| USD751999S1 | Array of triangular semiconductor dice | General | 13 | Active |
| US9000466B1 | Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening | Electricity | 12 | Active |
| US8791499B1 | GaN containing optical devices and method with ESD stability | Electricity | 12 | Active |
| USD739363S1 | Array of triangular semiconductor dies | General | 8 | Active |
| US9733854B2 | Dynamic adaptive compression in network storage device | Electricity | 8 | Active |
| US7858996B2 | Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices | Emerging Cross-Sectional Technologies | 5 | Active |
| US7550395B2 | Control of photoelectrochemical (PEC) etching by modification of the local electrochemical potential of the semiconductor structure relative to the electrolyte | Electricity | 5 | Active |
| US9722398B2 | Optical device structure using GaN substrates for laser applications | Electricity | 5 | Active |
| USD763806S1 | Triangular semiconductor die | General | 5 | Active |
| USRE47241E1 | Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors | General | 4 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.