Plasma surface treatment for SI and metal nanocrystal nucleation
US7846793B2 · kind B2 · utility
1Cited by
10References
19Claims
0Family size
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Key dates
| Filing date | Oct 3, 2007 |
| Grant date | Dec 7, 2010 |
| Priority date | — |
| Expiry date | Nov 5, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device, such as a nonvolatile memory device, and methods for forming the device in an integrated process tool are provided. The method includes depositing a tunnel oxide layer on a substrate, exposing the tunnel oxide layer to a plasma so that the plasma alters a morphology of a surface and near surface of the tunnel oxide to form a plasma altered near surface. Nanocrystals are then deposited on the altered surface of the tunnel oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.