Growth of reduced dislocation density non-polar gallium nitride

US7847293B2 · kind B2 · utility

Assignees

• The Regents of the University of California · US
• Japan Science and Technology Agency · JP

Inventors

• Benjamin A. Haskell · Lompoc, US
• Michael D. Craven · Goleta, US
• Paul T. Fini · Lompoc, US
• Steven P. DenBaars · Goleta, US
• James S. Speck · Fremont, US
• Shuji Nakamura · Goleta, US

Key dates

• Filing date: Feb 1, 2007
• Grant date: Dec 7, 2010
• Expiry date: Apr 2, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02647
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density.