UV treatment for carbon-containing low-k dielectric repair in semiconductor processing
US7851232B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2006 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | May 10, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric enables process-induced damage repair. The method is particularly applicable in the context of damascene processing. A method provides for forming a semiconductor device by depositing a carbon-containing low-k dielectric layer on a substrate and forming a trench in the low-k dielectric layer, the trench having sidewalls ending at a bottom. The trench is then exposed to UV radiation and, optionally a gas phase source of —CH3 groups, to repair damage to the carbon-containing low-k material of the trench sidewalls and bottom caused by the trench formation process (generally etching, ashing, and wet or dry cleaning). A similar treatment, with or without the gas phase source of —CH3 groups, may be applied to repair damage caused in a subsequent planarization operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.