Phase change memory device and fabricating method
US7851253B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 20, 2008 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | Apr 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
Abstract
A phase change memory device is provided. The phase change memory device includes a substrate with a first electrode layer formed thereon. A first phase change memory structure is on the first electrode layer and electrically connected to the first electrode layer. A second phase change memory structure is on the first phase change memory structure and electrically connected to the first phase change memory structure, wherein the first or second phase change memory structure includes a cup-shaped heating electrode. A first insulating layer covers a portion of the cup-shaped heating electrode along a first direction. A first electrode structure covers a portion of the first insulating layer and the cup-shaped heating electrode along a second direction. The first electrode structure includes a pair of phase change material sidewalls on a pair of sidewalls of the first electrode structure and covering a portion of the cup-shaped heating electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.