Method of forming complex oxide nanodots for a charge trap

US7851307B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Nirmal Ramaswamy · Boise, US
• Gurtej S. Sandhu · Boise, US
• Bhaskar Srinivasan · Boise, US
• John Smythe · Boise, US

Key dates

• Filing date: Aug 17, 2007
• Grant date: Dec 14, 2010
• Expiry date: Jan 13, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0228
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods and devices are disclosed, such as those involving forming a charge trap for, e.g., a memory device, which can include flash memory cells. A substrate is exposed to temporally-separated pulses of a titanium source material, a strontium source material, and an oxygen source material capable of forming an oxide with the titanium source material and the strontium source material to form the charge trapping layer on the substrate.