Organometallic precursors for seed/barrier processes and methods thereof
US7851360B2 · kind B2 · utility
7Cited by
10References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2007 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | Mar 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76874
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Organometallic precursors and methods for deposition on a substrate in seed/barrier applications are herein disclosed. In some embodiments, the organometallic precursor is a ruthenium-containing, tantalum-containing precursor or combination thereof and may be deposited by atomic layer deposition, chemical vapor deposition and/or physical vapor deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.