Hardmask trim method
US7851369B2 · kind B2 · utility
5Cited by
2References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 5, 2006 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | Sep 4, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming features in a polysilicon layer is provided. A hardmask layer is formed over the polysilicon layer. A photoresist mask is formed over the hardmask layer. The hardmask layer is etched through the photoresist mask to form a patterned hardmask. The patterned hardmask is trimmed by providing a non-carbon containing trim gas comprising oxygen and a fluorine containing compound, forming a plasma from the trim gas, and trimming the hardmask. Features are etched into the polysilicon layer through the hardmask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.