Low temperature conformal oxide formation and applications
US7851385B2 · kind B2 · utility
0Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2008 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | Oct 10, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention generally provides apparatus and method for processing a semiconductor substrate. Particularly, embodiments of the present invention relate to a method and apparatus for forming semiconductor devices having a conformal silicon oxide layer formed at low temperature. One embodiment of the present invention provides a method for forming a semiconductor gate structure. The method comprises forming a gate stack on a semiconductor substrate, forming a conformal silicon oxide layer on the semiconductor substrate using a low temperature cyclic method, and forming a spacer layer on the conformal silicon oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.