Patent · US Active

Memory device having cross-shaped semiconductor fin structure

US7851844B2 · kind B2 · utility

9Cited by

3References

16Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Koen Van der Zanden · Leuven, BE
Thomas Schulz · Austin, US

Key dates

Filing date	Jan 14, 2008
Grant date	Dec 14, 2010
Priority date	—
Expiry date	Dec 5, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/037
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

In an embodiment, a memory device, including: a semiconductor fin structure, each end portion of the fin structure including a source/drain region; a charge storage layer covering at least a portion of the fin structure; and a gate layer covering at least a portion of the charge storage layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.