Three dimensional NAND memory
US7851851B2 · kind B2 · utility
226Cited by
22References
20Claims
0Family size
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Key dates
| Filing date | Mar 27, 2007 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | Apr 4, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
Abstract
A monolithic, three dimensional NAND string includes a first memory cell located over a second memory cell. A semiconductor active region of the first memory cell is formed epitaxially on a semiconductor active region of the second memory cell, such that a defined boundary exists between the semiconductor active region of the first memory cell and the semiconductor active region of the second memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.