Wafer level packaged MEMS integrated circuit
US7851925B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2008 |
| Grant date | Dec 14, 2010 |
| Priority date | — |
| Expiry date | Apr 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/16235
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wafer-level packaged integrated circuit includes a semiconductor substrate including a first silicon layer. A micro-electromechanical system (MEMS) device is integrated into the first silicon layer. A thin-film deposited sealing member is deposited over the first silicon layer and is configured to seal a cavity in the first silicon layer. At least one additional layer is formed over the sealing member. At least one under bump metallization (UBM) is formed over the at least one additional layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.