Patent · US Active

Wafer level packaged MEMS integrated circuit

US7851925B2 · kind B2 · utility

25Cited by
12References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 19, 2008
Grant dateDec 14, 2010
Priority date
Expiry dateApr 23, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/16235
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A wafer-level packaged integrated circuit includes a semiconductor substrate including a first silicon layer. A micro-electromechanical system (MEMS) device is integrated into the first silicon layer. A thin-film deposited sealing member is deposited over the first silicon layer and is configured to seal a cavity in the first silicon layer. At least one additional layer is formed over the sealing member. At least one under bump metallization (UBM) is formed over the at least one additional layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.