Semiconductor heterojunction devices based on SiC

US7855108B2 · kind B2 · utility

Assignee

• NORTHROP GRUMMAN SYSTEMS CORPORATION · US

Inventors

• Narsingh B. Singh · Ellicott City, US
• Brian Wagner · Baltimore, US
• David J. Knuteson · Columbia, US
• Michael Edward Aumer · Raleigh, US
• Andre Berghmans · Elkton, US
• Darren Thomson · Cary, US
• David Kahler · Arbutus, US

Key dates

• Filing date: Feb 26, 2010
• Grant date: Dec 21, 2010
• Expiry date: Feb 26, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/475

Abstract

A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).