Patent · US Active

Method of integrating an air gap structure with a substrate

US7855123B2 · kind B2 · utility

11Cited by

1References

22Claims

0Family size

Assignee

TOKYO ELECTRON LIMITED · JP

Inventors

Eric M. Lee · Austin, US
Junjun Liu · Suzhou, CN
Dorel I. Toma · Dripping Springs, US

Key dates

Filing date	Mar 31, 2009
Grant date	Dec 21, 2010
Priority date	—
Expiry date	May 6, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for forming an air gap structure on a substrate is described. The method comprises depositing a sacrificial layer on a substrate, forming an adhesion-promoting layer between the sacrificial layer and the substrate, and depositing a capping layer over the sacrificial layer. The sacrificial layer and the capping layer are patterned and metalized. Thereafter, the sacrificial layer is decomposed and removed through the capping layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.