Interconnect capping layer and method of fabrication
US7855143B2 · kind B2 · utility
2Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2006 |
| Grant date | Dec 21, 2010 |
| Priority date | — |
| Expiry date | Dec 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76856
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to an interconnect capping layer and a method of fabricating a capping layer for an interconnect. In particular, but not exclusively, the invention relates to a capping layer for a copper interconnect used to interconnect elements in an integrated circuit. Embodiments of the invention provide a method of fabricating a capping layer for an interconnect in an integrated circuit, comprising the steps of: forming an interconnect comprising upper and lower lateral surfaces; forming a lateral diffusion stop layer between said lateral surfaces; and forming a capping layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.