Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon process
US7855422B2 · kind B2 · utility
5Cited by
3References
12Claims
0Family size
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Key dates
| Filing date | May 31, 2006 |
| Grant date | Dec 21, 2010 |
| Priority date | — |
| Expiry date | Mar 25, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/957
Abstract
A semiconductor device includes a transistor, a capacitor and a resistor wherein the capacitor includes a doped polysilicon layer to function as a bottom conductive layer with a salicide block (SAB) layer as a dielectric layer covered by a Ti/TiN layer as a top conductive layer thus constituting a single polysilicon layer metal-insulator-polysilicon (MIP) structure. While the high sheet rho resistor is also formed on the same single polysilicon layer with differential doping of the polysilicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.