Patent · US Active

Integrated circuit, method of manufacturing an integrated circuit, and memory module

US7855435B2 · kind B2 · utility

20Cited by

2References

13Claims

0Family size

Assignees

Qimonda AG · DE
Altis Semiconductor, SNC · FR

Inventors

Ulrich Klostermann · Fontainebleau, FR
Rainer Leuschner · Regensburg, DE

Key dates

Filing date	Mar 12, 2008
Grant date	Dec 21, 2010
Priority date	—
Expiry date	Dec 1, 2028

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/1675
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

According to one embodiment of the present invention, an integrated circuit including a plurality of memory cells is provided. Each memory cell includes a resistivity changing memory element which includes a top electrode, a bottom electrode, and resistivity changing material being disposed between the top electrode and the bottom electrode. Each resistivity changing memory element is at least partially surrounded by a thermal insulating structure. The thermal insulating structures are arranged such that the dissipation of heat generated within the resistivity changing memory elements into the environment of the resistivity changing memory elements is lowered.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.