Semiconductor package with semiconductor core structure and method of forming same
US7858441B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2008 |
| Grant date | Dec 28, 2010 |
| Priority date | — |
| Expiry date | Dec 8, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is made by providing a temporary carrier for supporting the semiconductor device. An integrated passive device (IPD) structure is formed over the temporary carrier. The IPD structure includes an inductor, resistor, and capacitor. Conductive posts are mounted to the IPD structure, and first semiconductor die is mounted to the IPD structure. A wafer molding compound is deposited over the conductive posts and the first semiconductor die. A core structure is mounted to the conductive posts over the first semiconductor die. The core structure includes a semiconductor material. Conductive through silicon vias (TSVs) are formed in the core structure. A redistribution layer (RDL) is formed over the core structure. A second semiconductor die is mounted over the semiconductor device. The second semiconductor die is electrically connected to the core structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.