Merged P-i-N Schottky structure

US7858456B2 · kind B2 · utility

Assignee

• Siliconix Technology C. V. · SG

Inventors

• Davide Chiola · Chino, US
• Kohji Andoh · El Segundo, US
• Silvestro Fimiani · Torino, IT

Key dates

• Filing date: Apr 11, 2006
• Grant date: Dec 28, 2010
• Expiry date: Apr 11, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/221

Abstract

Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper oppositely doped diffusion region.