Work function adjustment with the implant of lanthanides
US7858459B2 · kind B2 · utility
3Cited by
3References
4Claims
0Family size
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Key dates
| Filing date | Apr 20, 2007 |
| Grant date | Dec 28, 2010 |
| Priority date | — |
| Expiry date | Sep 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices and fabrication methods are provided, in which fully silicided transistor gates are provided for MOS transistors. A lanthanide series metal is implanted into the gate electrode layer prior to silicidation and diffuses into the gate dielectric during an activation anneal. This process and resultant structure provides adjustment of the gate electrode work function, thereby tuning the threshold voltage of the resulting transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.