Methods of manufacturing non-volatile memory devices having insulating layers treated using neutral beam irradiation
US7858464B2 · kind B2 · utility
7Cited by
4References
17Claims
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Key dates
| Filing date | Dec 31, 2008 |
| Grant date | Dec 28, 2010 |
| Priority date | — |
| Expiry date | Jan 9, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/69
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of manufacturing non-volatile memory devices that can reduce or prevent loss of charges stored in a charge storage layer and/or that can improve charge storage capacity by neutral beam irradiation of an insulating layer are disclosed. The methods include forming a tunneling insulating layer on a substrate, forming a charge storage layer on the tunneling insulating layer, forming a blocking insulating layer on the charge storage layer, irradiating the blocking insulating layer and/or the tunneling insulating layer with a neutral beam, and forming a gate conductive layer on the blocking insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.