Patent · US Active

Method for curing a porous low dielectric constant dielectric film

US7858533B2 · kind B2 · utility

499Cited by

13References

26Claims

0Family size

Assignee

TOKYO ELECTRON LIMITED · JP

Inventors

Junjun Liu · Suzhou, CN
Dorel I. Toma · Dripping Springs, US
Eric M. Lee · Austin, US

Key dates

Filing date	Mar 6, 2008
Grant date	Dec 28, 2010
Priority date	—
Expiry date	Mar 28, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02203
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to infrared (IR) radiation and ultraviolet (UV) radiation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.