System and method of controlling broad beam uniformity
US7858955B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2008 |
| Grant date | Dec 28, 2010 |
| Priority date | — |
| Expiry date | Feb 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31703
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion beam uniformity control system, wherein the uniformity control system comprising a differential pumping chamber that encloses an array of individually controlled gas jets, wherein the gas pressure of the individually controlled gas jets are powered by a controller to change the fraction of charge exchanged ions, and wherein the charge exchange reactions between the gas and ions change the fraction of the ions with original charge state of a broad ion beam, wherein the charge exchanged portion of the broad ion beam is removed utilizing an deflector that generates a magnetic field, a Faraday cup profiler for measuring the broad ion beam profile; and adjusting the individually controlled gas jets based upon feedback provided to the controller to obtain the desired broad ion beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.