Semiconductor package for improving characteristics for transmitting signals and power
US7859115B2 · kind B2 · utility
19Cited by
1References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2008 |
| Grant date | Dec 28, 2010 |
| Priority date | — |
| Expiry date | Jan 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor package includes a semiconductor chip having a first region and a second region. Bonding pads are formed and through-holes are defined in the first and second regions. Insulation layers are formed on sidewalls of the through-holes, and through-electrodes formed in the through-holes and connected with corresponding bonding pads. The insulation layers formed in the first and second regions have different thicknesses or dielectric constants.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.