Resistive memory device
US7859888B2 · kind B2 · utility
1Cited by
22References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 13, 2009 |
| Grant date | Dec 28, 2010 |
| Priority date | — |
| Expiry date | May 13, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A device having a resistive memory element, a control device, a digit line and a sensing circuit. The sensing circuit is configured to sense a voltage correlative to a resistance state of the resistive memory element. The sensing circuit if further configured to sense the voltage correlative to the resistance state after a waiting period that is less than or equal to the product of a capacitance of a digit line and a total resistance of the control device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.