Phase change memory structure with multiple resistance states and methods of programming and sensing same
US7859893B2 · kind B2 · utility
16Cited by
6References
25Claims
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Key dates
| Filing date | May 31, 2007 |
| Grant date | Dec 28, 2010 |
| Priority date | — |
| Expiry date | Mar 27, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/754
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory structure with multiple resistance states and methods of forming, programming, and sensing the same. The memory structure includes two or more phrase change elements provided between electrodes. Each phase change element has a respective resistance curve as a function of programming voltage which is shifted relative to the resistance curves of other phase change elements. In one example structure using two phase change elements, the memory structure is capable of switching among four resistance states.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.