Method for forming patterns of semiconductor device
US7862988B2 · kind B2 · utility
5Cited by
5References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2006 |
| Grant date | Jan 4, 2011 |
| Priority date | — |
| Expiry date | Apr 11, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0338
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method for forming patterns of a semiconductor device. According to the method, first mask patterns may be formed on a substrate, and second mask patterns may be formed on sidewalls of each first mask pattern. Third mask patterns may fill spaces formed between adjacent second mask patterns, and the second mask patterns may be removed. A portion of the substrate may then be removed using the first and third mask patterns as etch masks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.