Method for fabricating a charge trapping memory device
US7863132B2 · kind B2 · utility
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26Claims
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Key dates
| Filing date | Jun 20, 2006 |
| Grant date | Jan 4, 2011 |
| Priority date | — |
| Expiry date | Jun 27, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
A method for fabricating a charge trapping memory device includes providing a substrate; forming a first oxide layer on the substrate; forming a number of BD regions in the substrate; nitridizing the interface of the first oxide layer and the substrate via a process; forming a charge trapping layer on the first oxide layer; and forming a second oxide layer on the charge trapping layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.