Epitaxial deposition of doped semiconductor materials
US7863163B2 · kind B2 · utility
107Cited by
83References
39Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 22, 2006 |
| Grant date | Jan 4, 2011 |
| Priority date | — |
| Expiry date | Jan 6, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02639
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for depositing a carbon doped epitaxial semiconductor layer comprises maintaining a pressure of greater than about 700 torr in a process chamber housing a patterned substrate having exposed single crystal material. The method further comprises providing a flow of a silicon source gas to the process chamber. The silicon source gas comprises dichlorosilane. The method further comprises providing a flow of a carbon precursor to the process chamber. The method further comprises selectively depositing the carbon doped epitaxial semiconductor layer on the exposed single crystal material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.