Patent · US Active

Semiconductor body comprising a transistor structure and method for producing a transistor structure

US7863170B2 · kind B2 · utility

3Cited by

7References

27Claims

0Family size

Assignee

austriamicrosystems AG

Inventors

Georg Röhrer · Graz, AT
Bernard Löffler · Gleisdorf, AT
Jochen Kraft · Bruck an der Mur, AT

Key dates

Filing date	Mar 16, 2007
Grant date	Jan 4, 2011
Priority date	—
Expiry date	Jul 20, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/157
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor body includes a substrate, a buried zone having a first conductivity type that is formed in the substrate, a first zone having the first conductivity type that is above the buried zone, a second zone having a second conductivity type that is different from the first conductivity type and above the first zone, and a third zone having the first conductivity type that is above the second zone. The buried zone includes first and second implantation regions that are formed via first and second implantations that are performed using a mask. The buried zone, the first zone, the second zone and the third zone are parts of a first transistor structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.