Semiconductor device, manufacturing method of the semiconductor device, and mounting method of the semiconductor device
US7863745B2 · kind B2 · utility
4Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2006 |
| Grant date | Jan 4, 2011 |
| Priority date | — |
| Expiry date | Jun 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device, including a semiconductor substrate where a plurality of functional elements is formed; and a multilayer interconnection layer provided over the semiconductor substrate, the multilayer interconnection layer including a wiring layer mutually connecting the plural functional elements and including an interlayer insulation layer, wherein a region where the wiring layer is formed is surrounded by a groove forming part, the groove forming part piercing the multilayer interconnection layer; and the groove forming part is filled with an organic insulation material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.