Patent · US Active

In situ monitoring of wafer charge distribution in plasma processing

US7864502B2 · kind B2 · utility

10Cited by

7References

27Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Kevin Boyd · Issaquah, US
James A Gallo · South Burlington, US
Edward P. Higgins · Ripton, US
Mark L. Reath · Red Hook, US
Barbara L Shiffler · South Burlington, US
Justin W. Wong · South Burlington, US

Key dates

Filing date	May 15, 2007
Grant date	Jan 4, 2011
Priority date	—
Expiry date	Jul 25, 2028

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P80/30
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A processing system and method. The processing system includes a processing tool, an electrostatic chuck (ESC) arranged within the processing tool, and a system that at least one of detects at least one of an ESC bias spike and an ESC current spike of the ESC and determines when an ESC bias voltage is zero or exceeds a threshold value. The method includes at least one of detecting at least one of an ESC bias spike and an ESC current spike of the ESC, and determining when an ESC bias voltage is zero or exceeds a threshold value. The system and method can be used in real time ESC and plasma processing diagnostics to minimize yield loss and wafer scrap.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.