Electrically driven optical proximity correction
US7865864B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2008 |
| Grant date | Jan 4, 2011 |
| Priority date | — |
| Expiry date | Mar 14, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An approach that provides electrically driven optical proximity correction is described. In one embodiment, there is a method for performing an electrically driven optical proximity correction. In this embodiment, an integrated circuit mask layout representative of a plurality of layered shapes each defined by features and edges is received. A lithography simulation is run on the mask layout. An electrical characteristic is extracted from the output of the lithography simulation for each layer of the mask layout. A determination as to whether the extracted electrical characteristic is in conformance with a target electrical characteristic is made. Edges of the plurality of layered shapes in the mask layout are adjusted in response to determining that the extracted electrical characteristic for a layer in the mask layout fails to conform with the target electrical characteristic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.