Light-emitting semiconductor device using group III nitrogen compound

US7867800B2 · kind B2 · utility

Assignee

• TOYODA GOSEI CO., LTD. · JP

Inventors

• Katsuhide Manabe · Ichinomiya, JP
• Hisaki Kato · Hamamatsu, JP
• Michinari Sassa · Miyoshi, JP
• Shiro Yamazaki · Fukushima, JP
• Makoto Asai · Kariya, JP
• Naoki Shibata · Osaka, JP
• Masayoshi Koike · Miyoshi, JP

Key dates

• Filing date: Dec 20, 2007
• Grant date: Jan 11, 2011
• Expiry date: Aug 18, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8314

Abstract

A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1−x3)y3In1−y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1−x2)y2In1−y2N emission layer (5), and a Mg-doped (Alx1Ga1−x1)y1In1−y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.