Reduction of etch-rate drift in HDP processes
US7867921B2 · kind B2 · utility
5Cited by
14References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2008 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Mar 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A processing chamber is seasoned by providing a flow of season precursors to the processing chamber. A high-density plasma is formed from the season precursors by applying at least 7500 W of source power distributed with greater than 70% of the source power at a top of the processing chamber. A season layer having a thickness of at least 5000 Å is deposited at one point using the high-density plasma. Each of multiple substrates is transferred sequentially into the processing chamber to perform a process that includes etching. The processing chamber is cleaned between sequential transfers of the substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.