Depletion-mode single-poly EEPROM cell
US7868372B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2006 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Apr 25, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for forming a depletion-mode single-poly electrically erasable programmable read-only memory (EEPROM) cell is provided. The method includes providing a substrate having a floating region and a control region. Then, an isolation deep well and a deep well are formed in the floating region and the control region of the substrate respectively. A well region is formed in the isolation deep well simultaneously with forming an isolation well region between the isolation deep well and the deep well in the substrate. A depletion doped region and a cell implant region are formed at the well region of the substrate and the deep well of the substrate respectively. A floating gate structure is formed across over the floating region and the control region. An implantation process is performed to form a source/drain region and a heavily doped region in the depletion doped region and the cell implant region respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.