3-D single gate inverter

US7868391B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Phil C. Paone · Rochester, US
• David P. Paulsen · Dodge Center, US
• John E. Sheets, II · Zumbrota, US
• Kelly L. Williams · Rochester, US

Key dates

• Filing date: Jun 4, 2009
• Grant date: Jan 11, 2011
• Expiry date: Jun 4, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D88/01

Abstract

A 3-D (Three Dimensional) inverter having a single gate electrode. The single gate electrode has a first gate dielectric between the gate electrode and a body of a first FET (Field Effect transistor) of a first doping type, the first FET having first source/drain regions in a semiconductor substrate, or in a well in the semiconductor substrate. The single gate electrode has a second gate dielectric between the gate electrode and a body of a second FET of opposite doping to the first FET. Second source/drain regions of the second FET are formed from epitaxial layers grown over the first source/drain regions.