Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow

US7868410B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Philippe M. Vereecken · Liège, BE
• Veeraraghavan S. Basker · Schenectady, US
• Cyril Cabral, Jr. · Ossining, US
• Emanuel I. Cooper · Scarsdale, US
• Hariklia Deligianni · Alpine, US
• Martin M. Frank · Dobbs Ferry, US
• Rajarao Jammy · Hopewell Junction, US
• Vamsi K. Paruchuri · New York, US
• Katherine L. Saenger · Ossining, US
• Xiaoyan Shao · Yorktown Heights, US

Key dates

• Filing date: Feb 29, 2008
• Grant date: Jan 11, 2011
• Expiry date: Nov 4, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method is provided for electroplating a gate metal or other conducting or semiconducting material directly on a dielectric such as a gate dielectric. The method involves selecting a substrate, dielectric layer, and electrolyte solution or melt, wherein the combination of the substrate, dielectric layer, and electrolyte solution or melt allow an electrochemical current to be passed from the substrate through the dielectric layer into the electrolyte solution or melt. Methods are also provided for electrochemical modification of dielectrics utilizing through-dielectric current flow.