Semiconductor device which includes a capacitor and an interconnection film coupled to each other and a manufacturing method thereof
US7868420B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 15, 2008 |
| Grant date | Jan 11, 2011 |
| Priority date | — |
| Expiry date | Feb 7, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate and a capacitor which is disposed on a principal surface of the semiconductor substrate. The capacitor includes a lower electrode film disposed on the principal surface of the semiconductor substrate, a dielectric film disposed on the lower electrode and an upper electrode film disposed on the dielectric film. The semiconductor device further includes an interconnection film which includes a portion disposed on the upper electrode film so as to be electrically coupled to the upper electrode film. Directions of residual stresses of the upper electrode film coincide with directions of residual stresses of the portion of the interconnection film. Each of the upper electrode film and the interconnection film may include at least one of platinum and iridium. Also, there is provided a method of manufacturing the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.