Patent · US Active

Method of determining a memory state of a resistive memory cell and device measuring the memory state of a resistive memory cell

US7869253B2 · kind B2 · utility

34Cited by

9References

14Claims

0Family size

Assignee

Qimonda AG · DE

Inventors

Corvin Liaw · Birkenfeld, DE
Michael Angerbauer · Freutsmoos, DE
Heinz Hoenigschmid · Starnberg, DE

Key dates

Filing date	Aug 21, 2006
Grant date	Jan 11, 2011
Priority date	—
Expiry date	Dec 1, 2026

Classification

Technology area (CPC G)Physics
CPC primaryG11C2013/0054
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A method of determining the memory state of a resistive memory cell including a first electrode, a second electrode and an active material being arranged between the first electrode and the second electrode, comprises generating a read capacity by applying a voltage between the first electrode and the second electrode, discharging the read capacity over the active material of the memory cell, and determining the memory state of the memory cell in dependence on a change of the voltage during the discharge of the read capacity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.