Inventor · Freutsmoos, DE

Michael Angerbauer

6Patents
4h-index
5Co-inventors
39Inventor score

Filing activity: Dec 23, 2005 → Jul 16, 2007

Most-cited inventions

PatentTitleAreaCited byStatus
US7869253B2 Method of determining a memory state of a resistive memory cell and device measuring the memory state of a resistive memory cell Physics 34 Active
US7706201B2 Integrated circuit with Resistivity changing memory cells and methods of operating the same Physics 13 Active
US7420841B2 Memory device and method for transforming between non-power-of-2 levels of multilevel memory cells and 2-level data bits Physics 10 Active
US7342819B2 Methods for generating a reference voltage and for reading a memory cell and circuit configurations implementing the methods Physics 6 Expired
US7599209B2 Memory circuit including a resistive memory element and method for operating such a memory circuit Physics 4 Expired
US7518902B2 Resistive memory device and method for writing to a resistive memory cell in a resistive memory device Physics 3 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.