Plasma processing method and post-processing method
US7871532B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2006 |
| Grant date | Jan 18, 2011 |
| Priority date | — |
| Expiry date | Apr 6, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma processing method for performing a plasma process on a target object placed in a chamber includes a first plasma process of turning a gas containing at least a halogen element into plasma to generate first plasma, thereby processing the target object; a second plasma process, subsequent to the first plasma process, of supplying a gas containing oxygen into the chamber to generate second plasma, thereby processing the chamber and the target object; and a third plasma process, subsequent to the second plasma process, of turning a gas containing at least fluorine into plasma to generate third plasma, thereby processing the target object.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.