Method of increasing the reactivity of a precursor in a cyclic deposition process
US7871678B1 · kind B1 · utility
7Cited by
46References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2006 |
| Grant date | Jan 18, 2011 |
| Priority date | — |
| Expiry date | Feb 25, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32449
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to an enhanced cyclic deposition process suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. The technique increases the chemical reactivity of a precursor used in the process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.