Method of forming fin structures using a sacrificial etch stop layer on bulk semiconductor material
US7871873B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2009 |
| Grant date | Jan 18, 2011 |
| Priority date | — |
| Expiry date | Aug 4, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
Abstract
A method of manufacturing semiconductor fins for a semiconductor device may begin by providing a bulk semiconductor substrate. The method continues by growing a layer of first epitaxial semiconductor material on the bulk semiconductor substrate, and by growing a layer of second epitaxial semiconductor material on the layer of first epitaxial semiconductor material. The method then creates a fin pattern mask on the layer of second epitaxial semiconductor material. The fin pattern mask has features corresponding to a plurality of fins. Next, the method anisotropically etches the layer of second epitaxial semiconductor material, using the fin pattern mask as an etch mask, and using the layer of first epitaxial semiconductor material as an etch stop layer. This etching step results in a plurality of fins formed from the layer of second epitaxial semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.