Patent · US Active

Method of manufacturing a semiconductor package

US7875497B2 · kind B2 · utility

5Cited by
2References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 1, 2009
Grant dateJan 25, 2011
Priority date
Expiry dateDec 1, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3511
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method of manufacturing a semiconductor package which includes mounting a first chip on a first substrate by a flip chip method, the first substrate having a pre-designed pattern formed thereon; forming a cavity by etching a center portion of a metal oxide layer; mounting a second chip inside the cavity; forming at least one via such that the via penetrates an edge of the metal oxide layer; placing the metal oxide layer on the first substrate such that the second chip and the first chip face each other; and placing a second substrate on the metal oxide layer, the second substrate having a third chip mounted thereon.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.