High temperature ion implantation of nitride based HEMTs
US7875537B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2007 |
| Grant date | Jan 25, 2011 |
| Priority date | — |
| Expiry date | Mar 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is disclosed for forming a high electron mobility transistor. The method includes the steps of implanting a Group III nitride layer at a defined position with ions that when implanted produce an improved ohmic contact between the layer and contact metals, with the implantation being carried out at a temperature higher than room temperature and hot enough to reduce the amount of damage done to the Group III nitride layer, but below a temperature at which surface problems causing leakage at the gate or epitaxial layer dissociation would occur. An ohmic contact selected from the group consisting of titanium, aluminum, nickel and alloys thereof is added to the implanted defined position on the Group III nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.