Method for making semiconductor structures implementing sacrificial material
US7875548B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2008 |
| Grant date | Jan 25, 2011 |
| Priority date | — |
| Expiry date | Sep 27, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating semiconductor structures on a substrate, where the substrate has transistors formed thereon, are provided. One method includes forming interconnect metallization structures in a plurality of levels. The forming of the interconnect metallization structures includes depositing a sacrificial layer and performing a process to etch trenches, vias, and stubs into the sacrificial layer. The method further includes filling and planarizing the trenches, vias, and stubs that were etched and then etching away the sacrificial layer throughout the plurality of levels of the interconnect metallization structures. The etching leaving a voided interconnect metallization structure that is structurally supported by stubs that are non-electrically functional.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.