Patent · US Active

Phase change materials and associated memory devices

US7875873B2 · kind B2 · utility

4Cited by

4References

20Claims

0Family size

Assignees

Inventors

Yi-Chou Chen · Hsinchu, TW
Frances Anne Houle · Fremont, US
Simone Raoux · New York, US
Charles Thomas Rettner · San Jose, US
Alejandro G. Schrott · New York, US

Key dates

Filing date	Dec 16, 2008
Grant date	Jan 25, 2011
Priority date	—
Expiry date	Jul 31, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10B63/80
WIPO fieldAudio-visual technology
WIPO sectorElectrical engineering

Abstract

A memory device utilizes a phase change material as the storage medium. The phase change material includes at least one of Ge, Sb, Te, Se, As, and S, as well as a nitride compound as a dopant. The memory device can be a solid-state memory cell with electrodes in electrical communication with the phase change medium, an optical phase change storage device in which data is read and written optically, or a storage device based on the principle of scanning probe microscopy.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.