Lateral bipolar transistor with additional ESD implant

US7875933B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Jens Schneider · Bielefeld, DE
• Martin Wendel · Höhenkirchen-Siegertsbrunn, DE

Key dates

• Filing date: Mar 29, 2005
• Grant date: Jan 25, 2011
• Expiry date: Dec 31, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/184

Abstract

A semiconductor device (10) includes a semiconductor body (12) of a first conductivity type (e.g., p-type). A first doped region (14) of a second conductivity type (e.g., n-type) is disposed at an upper surface of the semiconductor body (12). A second doped region (16) of the second conductivity type is disposed at the upper surface of the semiconductor body (12) and is separated from the first doped region (14) by an isolation region (18). A first contact (26) overlies and is electrically coupled to the first doped region (14) and a second contact (28) overlies and is electrically coupled to the second doped region (16). A third doped region (32) of the first conductivity type is disposed within the semiconductor body (12) beneath the first doped region (14).