Deposit morphology of electroplated copper
US7879218B1 · kind B1 · utility
19Cited by
8References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2003 |
| Grant date | Feb 1, 2011 |
| Priority date | — |
| Expiry date | Feb 6, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides improved methods and devices for electroplating copper on a wafer. Some implementations of the present invention involve the pre-treatment of the wafer with a solution containing accelerator molecules. Preferably, the bath into which the wafer is subsequently placed for electroplating has a reduced concentration of accelerator molecules. The pre-treatment causes a reduction in roughness of the electroplated copper surface, particularly during the initial phases of copper growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.